The quantized version of the anomalous Hall effect has been predicted tooccur in magnetic topological insulators, but the experimental realization hasbeen challenging. Here, we report the observation of the quantum anomalous Hall(QAH) effect in thin films of Cr-doped (Bi,Sb)2Te3, a magnetic topologicalinsulator. At zero magnetic field, the gate-tuned anomalous Hall resistancereaches the predicted quantized value of h/e^2,accompanied by a considerabledrop of the longitudinal resistance. Under a strong magnetic field, thelongitudinal resistance vanishes whereas the Hall resistance remains at thequantized value. The realization of the QAH effect may lead to the developmentof low-power-consumption electronics.
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机译：磁场霍尔效应的量化形式已经预测会出现在磁性拓扑绝缘体中，但是实验实现却具有挑战性。在这里，我们报告观察到的量子掺杂霍尔（QAH）效应的掺铬（Bi，Sb）2Te3，一种磁性拓扑绝缘体的薄膜。在零磁场下，门调谐的异常霍尔电阻达到h / e ^ 2的预测量化值，同时伴随着相当大的纵向电阻下降。在强磁场下，纵向电阻消失，而霍尔电阻保持在量化值。 QAH效应的实现可能会导致低功耗电子产品的发展。
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